含吡啶环系西佛碱大环配合物和氮杂大环自由配体的合成

2, 6-二羟甲基吡啶(1)经活性MnO~2氧化得到2, 6-二甲酰基吡啶(2)。邻硝基苯酚与N-取代的二(氯乙基)胺在DMF溶液中反应, 得到N-取代的1, 5-二(邻硝基苯氧基)-3-氮杂戊烷(3a～3c), 再经水合肼/Raney Ni还原, 获得N-取代的1, 5-二(邻氨基苯氧基)-3-氮杂戊烷(4a～4c)。利用Ba^2^+作为模板离子, (2)分别与(4a～4c)反应, 合成了一类新的含吡啶环系西佛碱大环配合物I-III, 配合物I、III与NaBH~4的乙醇溶液还原解络, 得到氮杂大环自由配体IV和V。所有西佛碱大环配合物和氮杂大环自由配体均经元素分析、IR、^1H NMR、MS等证实了它们的结构和组成。     

镧系乙酰丙酮-5,10,15,20-四(4-吡啶基 )卟啉配合物

制备了乙酰丙酮-5,10,15,20-四(4-吡啶基)卟啉稀土配合物Ln(TPyP)acac[In:Dy,Ho,Yb,Lu;H~2TPyP:5,10,15,20-四(4-吡啶基)卟啉;Hacac:乙酰丙酮].配合物由一 个中心稀土离子,一个乙酰丙酮和一个四(4-吡啶基)卟啉组成,乙酰丙酮以氧双卤配位,卟啉以氮四卤配位,因此配合物有六配位的结构.     

聚4-重氮基苯乙烯与聚苯乙烯磺酸钠的自组装

1991年Ｄｅｃｈｅｒ等将带相反电荷的聚电解质 ,于水溶液中交替沉积在片基上 ,制备了多层超薄膜[1] ,这种制膜方法现称为静电自组装 .它操作简单 ,无需专用设备 ;一般在水体系进行 ,对环境友好 ;静电力比范德华力强 ,使它比ＬＢ膜稳定 ,所以近年来有很大发展[2 ] .现在自组装成膜驱动力已从静电力扩展到氢键力、电荷转移相互作用、疏水相互作用等 ,用于组装的组分也从聚电解质扩展到多官能团小分子、胶体粒子、无机纳米颗粒 ,ＤＮＡ、蛋白质等生物大分子等[3～ 11] .虽然自组装膜比ＬＢ膜稳定 ,但它也不耐极性溶剂、电解质水溶液等侵蚀 .如…     

南蛇藤倍半萜成分研究

从南蛇藤(Celastrus angulatus)的种子中分得三个新的倍半萜化合物(1～3)。它们的结构经紫外、红外、质谱及二维核磁谱确定为1β-乙酰氧基-8α-苯甲酰氧基-9β, 13-二(β-吡啶甲酰氧基)-β-二氢沉香呋喃(1)-1β, 2β-二羟基-6α-乙酰氧基-8β, 9β-二苯甲酰氧基-β-二氢沉香呋喃(2)和1β, 2β, 8β, 9β-四苯甲酰氧基-6α-乙酰氧基-β-二氢沉香呋喃(3)。     

超氧化物岐化酶的模拟: 大环双核铜(II)配合物中咪唑桥的稳定性

以2,6-二乙酰基吡啶与3-氧杂戊烷-1,5-二胺缩合而成的二四元环配体, 合成了以咪唑为桥基的双核铜(II)配合物。用EPR和pH滴定分别研究了在50%DMSO和水溶液中桥基稳定性。实验结果表明: 在混合溶液中桥基稳定的pH范围为5.6-10.3, 在水溶液中pH范围为7.5-10.5, 当pH>10时, 羟基取代了咪唑桥。由于大环效应使配合物的咪唑桥能在较宽的pH范围内稳定存在。     

配体的空间构型及疏水性对钌（Ⅱ）多吡啶配合物与DNA作用的影响

合成了4－氰基苯基咪唑并[5,6-f]邻菲咯啉（CYIP）和2－羧基苯基咪唑并[5, 6-f]邻菲咯啉（COIP）两种新配体及它们的钌混配配合物[Ru(bpy)2CYIP](ClO4)2 ·H2O（Rul）（bpy=2,2′-联吡啶），[Ru(phen)2CYIP](ClO4)2·H2O(Ru2) (phen=1,10-邻菲咯啉），[Ru(bpy)2COIP](ClO4)2·3H2O(Ru3)和[Ru(phen)2COIP] (ClO4)2·H2O(Ru4)，并用红外光谱、紫外光谱、核磁和质谱对它们进行了表征。 通过循环伏安法研究了这些配合物的电化学性质。采用电子吸收光谱、稳态荧光、 圆二色谱和粘度测定研究了配合物与小牛胸腺DNA的相互作用。结果表明配合物 Rul和Ru2通过CYIP配体以插入的方式与DNA结合，而配合物Ru3和Ru4则通过COIP配 体以部分插入的方式与DNA结合。     

β-烷氧羰基乙基三氯化锡与单齿配体配合物的合成及酯交换反应

合成了16个β-烷氧羰基乙基三氯化锡与二甲基亚砜、N-氧化吡啶、吡啶等单齿配体的配合物，经过元素分析、IR、^1H NMR、TG-DTA等表征了其结构。报道了β-烷氧羰基乙基三氯化锡配合物和醇的酯交换反应，提出了其可能的反应机理。     

Influence of Al-doped ZnO and Ga-doped ZnO substrates on third harmonic generation of gold nanoparticles

Principal role of substrate types on the nonlinear optical properties of Au NP was investigated. Third harmonic generation (THG) studies were carried out for Au NP deposited on the Al-doped ZnO (AuNP/AZO) and Ga-doped ZnO (AuNP/GZO) substrates at fundamental wavelength of 20 ns Er:glass laser (generating at 1540 nm wavelength) during photostimulation by the 532 nm 15 ns laser pulses. Sizes of Au NP were 5 nm, 10 nm, 20 nm, and 30 nm. The output signal was registered at 513 nm. The photoinduced power density was increased from 0 up to 800 MW/cm². So in our work we explore the role of the substrate on the optically stimulated non-linear optical properties during simultaneous photo stimulation near the inter-band transition. The results were studied depending on the type of substrate and the sizes of the deposited nanoparticles. The analysis was done within a framework of interaction between the photoinduced light and SPR wavelengths. Control of the photoinduced temperature was done.     

Effects of hydrogen flux on the properties of Al-doped ZnO films sputtered in Ar + H2 ambient at low temperature

Al-doped ZnO (AZO) transparent conductive thin films were grown by magnetron sputtering with AZO (98 wt.% ZnO, 2 wt.% Al₂O₃) ceramic target in Ar + H₂ ambient at a relatively low temperature of 100 °C. To investigate the dependence of crystalline and properties of as-grown AZO films on the H₂-flux, X-ray diffraction (XRD), X-ray photoemission spectrometer (XPS), Hall and transmittance spectra measurements were employed to analyze the AZO samples deposited with different H₂-flux. The results indicate that H₂-flux has a considerable influence on the transparent conductive properties of AZO films. The resistivity of 4.15 × 10⁻⁴ Ω cm and the average transmittance of more than 94% in the visible range were obtained with the optimal H₂-flux of 1.0 sccm. Such a low temperature growing method present here may be especially useful for some low-melting point photoelectric devices and substrates.     

Thermal annealing effects on the dynamic photoresponse properties of Al-doped ZnO nanowires network

In this study, UV photodetectors based on a network of aluminium-doped zinc oxide (AZO) nanowires were manufactured at a low cost; for this purpose, a fast and simple fabrication process that involved dropping nanowires dispersion solution was employed instead of the conventional e-beam lithography process that is used to manufacture single nanowire–based UV photodetectors. It was demonstrated that nanowire network–based UV photodetectors provide a much faster UV photoresponse than conventional single nanowire–based UV photodetectors. The fast UV photoresponse of the fabricated UV photodetector can be attributed to the fact that the potential barriers formed in the nanowire network junctions effectively block the flow of electrons during the process of photocurrent decay. Furthermore, the UV photoresponse under illumination by a 254 nm UV source was studied as a function of the annealing temperature of the AZO nanowires network at a bias of 5 V. The fabricated UV photodetector showed the fastest response of 2 s to UV illumination in air when the sample was annealed in air for 1 h at 300 °C.